Article · Wikipedia archive · Last revised Jul 19, 2026

BARITT diode

The BARITT diode is a high frequency semiconductor component of microelectronics. A related component is the DOVETT diode. The BARITT diode uses injection and transit-time properties of minority carriers to produce a negative resistance at microwave frequencies. About the biased forward boundary layer, the minority carriers are injected. There is no avalanche breakdown instead. Consequently, both the phase shift and the output power is substantially lower than in an IMPATT diode.

Last revised
Jul 19, 2026
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The BARITT diode (barrier injection transit-time) is a high frequency semiconductor component of microelectronics. A related component is the DOVETT diode. The BARITT diode uses injection and transit-time properties of minority carriers to produce a negative resistance at microwave frequencies. About the biased forward boundary layer, the minority carriers are injected. There is no avalanche breakdown instead. Consequently, both the phase shift and the output power is substantially lower than in an IMPATT diode.1

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